太赫兹应用gaas阻塞杂质带探测器的电特性仿真

Numerical Simulation of Optoelectronic Devices, 2014 Pub Date : 2014-10-27 DOI:10.1109/NUSOD.2014.6935340

Xiaodong Wang, B. Wang, Liwei Hou, Wei Xie, Xiaoyao Chen, M. Pan

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引用次数: 0

摘要

对砷基阻塞杂质带(BIB)探测器的电特性进行了数值研究。考虑到GaAs阻挡层的不成熟，给出了器件的电子密度和电场分布。然后通过考虑杂质带效应来模拟温度相关的暗电流特性。

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Electrical characteristics simulation of GaAs-based blocked-impurity-band detector for THz application

Electrical characteristics of GaAs-based blocked-impurity-band (BIB) detector are numerically studied. Electron density and electric field distributions of the device are presented with consideration of immaturity of GaAs blocking layer. Temperature-dependent dark current characteristics are then simulated by taking into account impurity-band effects.

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Numerical Simulation of Optoelectronic Devices, 2014

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