高频相关噪声对SiGe HBT低噪声放大器设计的影响

Pei Shen, G. Niu, Ziyan Xu, Wanrong Zhang
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引用次数: 3

摘要

本文研究了高频噪声相关对SiGe HBT LNA设计的影响。通过相关性,发现同时噪声和阻抗匹配继续保持近似。然而,噪声匹配需要更大的尺寸和更高的偏置电流。研究了在不考虑噪声相关性的情况下设计的LNAs的实际噪声系数(NF)。进一步的研究表明,比噪声匹配尺寸小得多的尺寸是更可取的,因为它可以产生高增益,高线性度和NF,在更小的功耗下仅略高的噪声系数。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Impact of high frequency correlated noise on SiGe HBT low noise amplifier design
This paper investigates the impact of high frequency noise correlation on SiGe HBT LNA design. With correlation, simultaneous noise and impedance match is found to continue to hold approximately. However, a larger size and hence a higher biasing current are required for noise matching. The actual noise figure (NF) of LNAs designed without considering noise correlation is also investigated. Further investigation shows that a size considerably smaller than noise matching size is more preferable, as it produces high gain, high linearity and NF only slightly higher noise figure at much smaller power consumption.
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