S. Eminente, N. Barin, P. Palestri, C. Fiegna, E. Sangiorgi
{"title":"用于模拟/混合信号和射频应用的十纳米mosfet的蒙特卡罗模拟","authors":"S. Eminente, N. Barin, P. Palestri, C. Fiegna, E. Sangiorgi","doi":"10.1109/IEDM.2006.346942","DOIUrl":null,"url":null,"abstract":"A state of the art Monte-Carlo simulator is applied to the investigation of the RF performance of bulk MOSFETs designed according to the prescriptions of the 2005 ITRS Roadmap for analog and mixed signal applications, and of a 53 nm ultra-thin-body (UTB) single-gate (SG) SOI MOSFET. We provide an analysis of the signal-delay build-up along the channel and an investigation of the scaling properties of the parameters of the AC equivalent circuit, the transition frequency FT, and the 3dB bandwidth of the voltage gain in common-source configuration. The effects of ballistic transport and their impact on the AC figures of merit are investigated for short UTB double-gate MOSFETs","PeriodicalId":366359,"journal":{"name":"2006 International Electron Devices Meeting","volume":"94 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Monte Carlo Simulation of deca-nanometer MOSFETs for Analog/Mixed-signal and RF applications\",\"authors\":\"S. Eminente, N. Barin, P. Palestri, C. Fiegna, E. Sangiorgi\",\"doi\":\"10.1109/IEDM.2006.346942\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A state of the art Monte-Carlo simulator is applied to the investigation of the RF performance of bulk MOSFETs designed according to the prescriptions of the 2005 ITRS Roadmap for analog and mixed signal applications, and of a 53 nm ultra-thin-body (UTB) single-gate (SG) SOI MOSFET. We provide an analysis of the signal-delay build-up along the channel and an investigation of the scaling properties of the parameters of the AC equivalent circuit, the transition frequency FT, and the 3dB bandwidth of the voltage gain in common-source configuration. The effects of ballistic transport and their impact on the AC figures of merit are investigated for short UTB double-gate MOSFETs\",\"PeriodicalId\":366359,\"journal\":{\"name\":\"2006 International Electron Devices Meeting\",\"volume\":\"94 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2006 International Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.2006.346942\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2006.346942","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
摘要
根据2005年ITRS路线图的规定设计的用于模拟和混合信号应用的块体MOSFET，以及53 nm超薄体(UTB)单门(SG) SOI MOSFET，应用最先进的蒙特卡罗模拟器来研究射频性能。我们分析了沿通道累积的信号延迟，并研究了交流等效电路参数、过渡频率FT和共源配置下电压增益的3dB带宽的缩放特性。研究了短UTB双栅mosfet的弹道输运效应及其对交流性能因数的影响
Monte Carlo Simulation of deca-nanometer MOSFETs for Analog/Mixed-signal and RF applications
A state of the art Monte-Carlo simulator is applied to the investigation of the RF performance of bulk MOSFETs designed according to the prescriptions of the 2005 ITRS Roadmap for analog and mixed signal applications, and of a 53 nm ultra-thin-body (UTB) single-gate (SG) SOI MOSFET. We provide an analysis of the signal-delay build-up along the channel and an investigation of the scaling properties of the parameters of the AC equivalent circuit, the transition frequency FT, and the 3dB bandwidth of the voltage gain in common-source configuration. The effects of ballistic transport and their impact on the AC figures of merit are investigated for short UTB double-gate MOSFETs
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
