新型重主基硫属化合物的探索性合成

A. Assoud, S. Derakhshan, N. Soheilnia, H. Kleinke
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引用次数: 0

摘要

我们最近开始研究混合价锡硫族化合物和多价锡硫族化合物,即SrSn/sub 2/Se/sub 4/、Sr/sub 2/SnSe/sub 5/、Ba/sub 2/SnSe/sub 5/和Ba/sub 2/SnTe/sub 5/。这些材料的带隙(经过计算和部分实验证实)在0.2 eV (Ba/sub 2/SnTe/sub 5/)和1.2 eV (Ba/sub 2/SnSe/sub 5/)之间。这些材料以分子单元为主,分别为SnSe/sub 4//sup 4-/四面体、Sn/sub 3/Se/sub 10//sup 8-/和Sn/sub 3/Te/sub 10//sup 8u/单元,以及Se/sub 3//sup 2-/和Te/sub 5//sup 4-/单元。新季系Ba/sub 3/Cu/sub 2/Sn/sub 3/Se/sub 10/、BaCu/sub 2/SnSe/sub 4/和BaAg/sub 2/SnSe/sub 4/中发现了三维相互连接的共价网络,包括一维通道中的Ba/sup 2+/阳离子。尽管带隙小(例如BaAg/sub 2/SnSe/sub 4/的带隙为0.2 eV),但制备的样品具有相当小的电导率,但具有较大的塞贝克系数(在300 K时高于+500 /spl mu/V/K)。我们最近发现的包含扩展Cu原子亚结构的多碲化物Ba/sub 3/Cu/sub 14-/spl delta//Te/sub 12/和Ba/sub 2/Cu/sub 4-/spl delta//Te/sub 5/具有优于锡硫族化合物的热电性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Exploratory synthesis of new heavy main group chalcogenides
We have recently commenced to investigate mixed valent tin chalcogenides as well as polychalcogenides, namely SrSn/sub 2/Se/sub 4/, Sr/sub 2/SnSe/sub 5/, Ba/sub 2/SnSe/sub 5/, and Ba/sub 2/SnTe/sub 5/. These materials exhibit (calculated and in part experimentally confirmed) band gaps between 0.2 eV (Ba/sub 2/SnTe/sub 5/) and 1.2 eV (Ba/sub 2/SnSe/sub 5/). Molecular units are predominant in these materials, namely SnSe/sub 4//sup 4-/ tetrahedra, Sn/sub 3/Se/sub 10//sup 8-/ and Sn/sub 3/Te/sub 10//sup 8u/ilding blocks, respectively, as well as Se/sub 3//sup 2-/ and Te/sub 5//sup 4-/ units. Three-dimensionally interconnected covalent networks were found in the new quaternaries Ba/sub 3/Cu/sub 2/Sn/sub 3/Se/sub 10/, BaCu/sub 2/SnSe/sub 4/, and BaAg/sub 2/SnSe/sub 4/, including the Ba/sup 2+/ cations in one-dimensional channels. Despite the small band gaps (e.g., 0.2 eV for BaAg/sub 2/SnSe/sub 4/), the as-prepared samples exhibit rather small electrical conductivities, but large Seebeck coefficients (above +500 /spl mu/V/K at 300 K). Our most recently discovered polytellurides Ba/sub 3/Cu/sub 14-/spl delta//Te/sub 12/ and Ba/sub 2/Cu/sub 4-/spl delta//Te/sub 5/ comprising extended Cu atom substructures appear to have thermoelectric properties superior to the tin chalcogenides.
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