{"title":"具有超晶格结构的高速外延In0.52Al0.48As/In0.53Ga0.47As/InP PIN光电二极管","authors":"A. Udalov, E. Shesterikov, I. Kulinich","doi":"10.1117/12.2644856","DOIUrl":null,"url":null,"abstract":"The article provides the PIN-photodiode semiconductor structure In0.52Al0.48As/In0.53Ga0.47As/InP computer simulation results. The structure was grown on an InP-substrate by the method of molecular beam epitaxy. In modeling, PIN-photodiode mathematical model was constructed, with the help of which photocurrent values were obtained for various thicknesses of the undoped section in photodiode absorbing layer. The photodiode response time values are also obtained.","PeriodicalId":217776,"journal":{"name":"Atmospheric and Ocean Optics","volume":"55 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-12-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"High-speed heteroepitaxial In0.52Al0.48As/In0.53Ga0.47As/InP PIN photodiodes with superlattice structure\",\"authors\":\"A. Udalov, E. Shesterikov, I. Kulinich\",\"doi\":\"10.1117/12.2644856\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The article provides the PIN-photodiode semiconductor structure In0.52Al0.48As/In0.53Ga0.47As/InP computer simulation results. The structure was grown on an InP-substrate by the method of molecular beam epitaxy. In modeling, PIN-photodiode mathematical model was constructed, with the help of which photocurrent values were obtained for various thicknesses of the undoped section in photodiode absorbing layer. The photodiode response time values are also obtained.\",\"PeriodicalId\":217776,\"journal\":{\"name\":\"Atmospheric and Ocean Optics\",\"volume\":\"55 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-12-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Atmospheric and Ocean Optics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1117/12.2644856\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Atmospheric and Ocean Optics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.2644856","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High-speed heteroepitaxial In0.52Al0.48As/In0.53Ga0.47As/InP PIN photodiodes with superlattice structure
The article provides the PIN-photodiode semiconductor structure In0.52Al0.48As/In0.53Ga0.47As/InP computer simulation results. The structure was grown on an InP-substrate by the method of molecular beam epitaxy. In modeling, PIN-photodiode mathematical model was constructed, with the help of which photocurrent values were obtained for various thicknesses of the undoped section in photodiode absorbing layer. The photodiode response time values are also obtained.
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