低温生长砷化镓光强依赖离焦锁模Nd:玻璃光纤激光器

Conference Digest. 2000 Conference on Lasers and Electro-Optics Europe (Cat. No.00TH8505) Pub Date : 2000-09-10 DOI:10.1109/CLEOE.2000.909669

M. Leitner, P. Glas, M. Wrage, T. Sandrock, H. Legall, A. Heuer, G. Apostolopoulos, J. Herfort, L. Daweritz

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引用次数: 0

摘要

只提供摘要形式。近年来，像sesam这样的半导体器件的发展使得固态激光器在产生超短脉冲方面取得了实质性的进展。半导体材料的使用使得强非线性特性和短复合时间的结合成为可能。在这项工作中，我们描述了一种基于低温生长GaAs (ht -GaAs)的新型锁模装置，该装置结合了掺杂Nd/sub 2/O/sub 3/ (1300 ppm)的双包层二氧化硅光纤激光器，其发射速度为1.06 /spl mu/m。模式锁定机制是基于LT-GaAs中强度依赖的散焦。

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Mode locked Nd:glass fiber laser using intensity dependent defocusing by low-temperature-grown GaAs

Summary form only given. In recent years the development of semiconductor devices like SESAMs has led to a substantial progress in the generation of ultrashort pulses in solid-state lasers. The use of semiconductor materials makes it possible to combine strong nonlinear properties with short recombination times. In this work we describe a novel mode locking device based on low-temperature-grown GaAs (LT-GaAs) combined with a double-clad silica fiber laser being doped with Nd/sub 2/O/sub 3/ (1300 ppm) emitting at 1.06 /spl mu/m. The mode locking mechanism is based on the intensity dependent defocusing in the LT-GaAs.

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Conference Digest. 2000 Conference on Lasers and Electro-Optics Europe (Cat. No.00TH8505)

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