基于0.09 μm CMOS技术的IEEE 802.1 la无线接入频率合成射频源设计

2010 Annual IEEE India Conference (INDICON) Pub Date : 2010-12-01 DOI:10.1109/INDCON.2010.5712665

K. K. Mallik, Rupanjal Deb Barma, K. N. Reddy

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引用次数: 0

摘要

设计了一种适用于5 GHz IEEE 802.11a上、中、下频段的多波段合成器，并采用0.09 μm CMOS工艺进行了性能评估。仿真结果表明，该方法具有6μs的快速沉降时间和- 139.9dBc/Hz @ 1MHz的优越相位噪声。在整个频率范围内观察到线性压控振荡器的传输特性。压控振荡器输出为相位正交，0.09 μm CMOS技术使设计节能。

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A design of frequency synthesized RF-source for IEEE 802.1 la wireless access for 0.09 μm CMOS technology

A Multi-band Synthesizer suitable for 5 GHz IEEE 802.11a upper, middle and lower frequency bands has been designed and performance evaluated for fabrication using 0.09 μm CMOS technology. A fast 6μs settling time and superior −139.9dBc/Hz @ 1MHz offset phase noise have been observed by simulation. A linear VCO transfer characteristics has been observed over the frequency range. VCO outputs are in phase quadrature and 0.09 μm CMOS technology makes the design energy efficient.

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2010 Annual IEEE India Conference (INDICON)

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