传统平面隧道场效应管、带口袋的平面隧道场效应管和L形隧道场效应管的单事件瞬态分析

2017 International Conference on Nextgen Electronic Technologies: Silicon to Software (ICNETS2) Pub Date : 2017-03-01 DOI:10.1109/ICNETS2.2017.8067923

R. Manohari, K. K. Nagarajan, R. Srinivasan

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引用次数: 4

摘要

技术规模化的影响明显地增加了半导体器件对辐射的敏感性。器件中的单事件瞬态(SET)是当单个粒子通过器件中的敏感节点时产生电荷的过程。本文从导通电流的角度对传统平面隧道场效应管、带口袋的平面隧道场效应管和L形隧道场效应管三种不同的隧道结构进行了性能分析。在研究传统平面隧道场效应管的基础上，研究了带口袋的平面隧道场效应管和L形隧道场效应管的单事件瞬态性能。2D-TCAD模拟用于此目的。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Single event transient analyses of conventional planar tunnel FET, planar Tunnel FET with pocket and L shaped tunnel FET

The impact of technology scaling vividly increases the susceptibility of semiconductor devices to radiation. Single Event Transient (SET) in a device is a process in which the generation of charge takes place when a single particle passes through a sensitive node in the device. This paper deals with the performance analysis of three different tunneling structures such as the conventional planar Tunnel FET, Planar Tunnel FET with pocket and L shaped Tunnel FET (proposed to improve the ON current of conventional Tunnel FET) are scrutinized in terms of on current. Along with that the conventional planar Tunnel FET, Planar Tunnel FET with pocket and L shaped Tunnel FET are studied for their single event transient performance. 2D-TCAD simulations are used for this purpose.

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2017 International Conference on Nextgen Electronic Technologies: Silicon to Software (ICNETS2)

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