氮化侧壁衬垫nmosfet热载流子降解机理及前景器件设计

1998 IEEE International Reliability Physics Symposium Proceedings. 36th Annual (Cat. No.98CH36173) Pub Date : 1900-01-01 DOI:10.1109/RELPHY.1998.670531

Y. Sambonsugi, T. Sugii

{"title":"氮化侧壁衬垫nmosfet热载流子降解机理及前景器件设计","authors":"Y. Sambonsugi, T. Sugii","doi":"10.1109/RELPHY.1998.670531","DOIUrl":null,"url":null,"abstract":"We investigated the HC reliability of deep submicron LDD nMOSFETs with nitride sidewalls, and found a unique stress bias dependence of HC degradation under lower stress bias conditions. This means lifetime estimations are inconclusive because of deviations from the empirical law. Moreover, we succeeded in improving HC reliability in nitride sidewall devices by shifting the location of the HC injection.","PeriodicalId":196556,"journal":{"name":"1998 IEEE International Reliability Physics Symposium Proceedings. 36th Annual (Cat. No.98CH36173)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Hot-carrier degradation mechanism and promising device design of nMOSFETs with nitride sidewall spacer\",\"authors\":\"Y. Sambonsugi, T. Sugii\",\"doi\":\"10.1109/RELPHY.1998.670531\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We investigated the HC reliability of deep submicron LDD nMOSFETs with nitride sidewalls, and found a unique stress bias dependence of HC degradation under lower stress bias conditions. This means lifetime estimations are inconclusive because of deviations from the empirical law. Moreover, we succeeded in improving HC reliability in nitride sidewall devices by shifting the location of the HC injection.\",\"PeriodicalId\":196556,\"journal\":{\"name\":\"1998 IEEE International Reliability Physics Symposium Proceedings. 36th Annual (Cat. No.98CH36173)\",\"volume\":\"37 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1998 IEEE International Reliability Physics Symposium Proceedings. 36th Annual (Cat. No.98CH36173)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RELPHY.1998.670531\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1998 IEEE International Reliability Physics Symposium Proceedings. 36th Annual (Cat. No.98CH36173)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RELPHY.1998.670531","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 3

摘要

我们研究了具有氮化侧壁的深亚微米LDD nmosfet的HC可靠性，发现在较低应力偏置条件下，HC降解具有独特的应力偏置依赖性。这意味着由于偏离经验规律，寿命估计是不确定的。此外，通过改变HC注入的位置，我们成功地提高了氮化侧壁器件中HC的可靠性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Hot-carrier degradation mechanism and promising device design of nMOSFETs with nitride sidewall spacer

We investigated the HC reliability of deep submicron LDD nMOSFETs with nitride sidewalls, and found a unique stress bias dependence of HC degradation under lower stress bias conditions. This means lifetime estimations are inconclusive because of deviations from the empirical law. Moreover, we succeeded in improving HC reliability in nitride sidewall devices by shifting the location of the HC injection.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

1998 IEEE International Reliability Physics Symposium Proceedings. 36th Annual (Cat. No.98CH36173)

自引率

0.00%

发文量