基于填充GST材料的狭缝纳米光束谐振器的非易失性光存储器

2018 Asia Communications and Photonics Conference (ACP) Pub Date : 2018-10-01 DOI:10.1109/ACP.2018.8596243

Hao Hu, Hanyu Zhang, Linjie Zhou, Youhua Xu, Liangjun Lu, Jianping Chen, B. Rahman

{"title":"基于填充GST材料的狭缝纳米光束谐振器的非易失性光存储器","authors":"Hao Hu, Hanyu Zhang, Linjie Zhou, Youhua Xu, Liangjun Lu, Jianping Chen, B. Rahman","doi":"10.1109/ACP.2018.8596243","DOIUrl":null,"url":null,"abstract":"We propose a multi-level phase-change memory device based on a Ge2Sb2Te5 (GST)-filled silicon slot nanobeam cavity. Simulations show that the nanobeam resonance can be tuned step-by-step through phase change of the GST, allowing for multi-level storage of optical data.","PeriodicalId":431579,"journal":{"name":"2018 Asia Communications and Photonics Conference (ACP)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Non-volatile optical memory based on a slot nanobeam resonator filled with GST material\",\"authors\":\"Hao Hu, Hanyu Zhang, Linjie Zhou, Youhua Xu, Liangjun Lu, Jianping Chen, B. Rahman\",\"doi\":\"10.1109/ACP.2018.8596243\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We propose a multi-level phase-change memory device based on a Ge2Sb2Te5 (GST)-filled silicon slot nanobeam cavity. Simulations show that the nanobeam resonance can be tuned step-by-step through phase change of the GST, allowing for multi-level storage of optical data.\",\"PeriodicalId\":431579,\"journal\":{\"name\":\"2018 Asia Communications and Photonics Conference (ACP)\",\"volume\":\"25 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 Asia Communications and Photonics Conference (ACP)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ACP.2018.8596243\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 Asia Communications and Photonics Conference (ACP)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ACP.2018.8596243","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 5

摘要

我们提出了一种基于Ge2Sb2Te5 (GST)填充硅槽纳米束腔的多级相变存储器件。仿真结果表明，纳米光束共振可以通过GST的相位变化逐步调谐，从而实现光学数据的多级存储。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Non-volatile optical memory based on a slot nanobeam resonator filled with GST material

We propose a multi-level phase-change memory device based on a Ge2Sb2Te5 (GST)-filled silicon slot nanobeam cavity. Simulations show that the nanobeam resonance can be tuned step-by-step through phase change of the GST, allowing for multi-level storage of optical data.

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2018 Asia Communications and Photonics Conference (ACP)

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