氮化镓作为中子探测材料

Proceedings of the IEEE SoutheastCon 2010 (SoutheastCon) Pub Date : 2010-03-18 DOI:10.1109/SECON.2010.5453842

A. Melton, E. Burgett, M. Jamil, T. Zaidi, N. Hertel, I. Ferguson

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引用次数: 7

摘要

GaN是一种很有前途的中子探测材料，与Si和GaAs相比具有优势。用MOCVD法生长了掺杂Gd的GaN薄膜，并对其用于中子探测的可行性进行了研究。通过HRXRD和霍尔效应测量对膜进行了结构和电学表征。利用掺杂和未掺杂薄膜的α粒子发光来研究其分辨特性。

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GaN as a neutron detection material

GaN is a promising material for neutron detection applications, with advantages over Si and GaAs. GaN films doped with Gd have been grown by MOCVD and investigated for their feasibility for neutron detection. The films were structurally and electrically characterized through HRXRD and Hall effect measurements. Alpha particle luminescence of both doped and undoped films was used to investigate gamma discrimination properties.

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Proceedings of the IEEE SoutheastCon 2010 (SoutheastCon)

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