SONOS嵌入式Flash IP使用陷阱深度控制的SiN薄膜,可在200°C下保持数据超过10年

Y. Taniguchi, Shoji Yoshida, Teruhiko Egashira, ChihBin Kuo, Yi-Da Shie, YuChun Wang, ChenYu Huang, Tsuyoshi Tamatsu, Keiji Okamoto, Masanobu Hishiki, Yasushi Sasaki, Fukuo Owada, Nobuhiko Ito, Y. Shinagawa, ChihMing Kuo, S. Noda, Toshikazu Matsui, Kosuke Okuyama
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引用次数: 0

摘要

我们为物联网、工业和汽车领域推出了一款经济高效、可靠节能的嵌入式闪存IP。一个二氧化硅-氮化氧化物-硅(SONOS)型存储器嵌入在130BCD+工艺平台上,只有三个额外的掩模步骤。在台积电已按预期检查了包括资格在内的业绩。通过将陷阱深度控制的SiN薄膜应用于SONOS存储器,可以在200℃下实现10年以上的数据存储。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
SONOS Embedded Flash IP Using Trap-Depth-Controlled SiN Film Enabling Data Retention more than 10 years at 200°C
We introduce a cost-effective, reliable and energy-efficient embedded-flash memory IP for IoT, industry, and automotive. A Silicon-Oxide-Nitride-Oxide-Silicon (SONOS)type memory is embedded on 130BCD+ process platform with only three additional mask steps. Performance including qualification has been checked as expected at TSMC. By applying trapdepth-controlled SiN film to the SONOS memory, data storage more than 10 years at 200oC is achieved.
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