低阻Ti/TiN/Al薄膜补偿电阻器的研制与表征

2018 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA) Pub Date : 2018-11-01 DOI:10.1109/CICTA.2018.8706074

Wei Zhang, Xiulan Cheng, Xiaodong Wang

{"title":"低阻Ti/TiN/Al薄膜补偿电阻器的研制与表征","authors":"Wei Zhang, Xiulan Cheng, Xiaodong Wang","doi":"10.1109/CICTA.2018.8706074","DOIUrl":null,"url":null,"abstract":"Low compensation Ti/TiN/Al film resistor including resistance and two pads was designed and fabricated with one step of lithography and metal sputter. The fabricated 8$\\mu$m width near 50$\\Omega$ resistor was stable and precise after annealing, which can be loaded with 8V DC voltage for over 60 minutes.","PeriodicalId":186840,"journal":{"name":"2018 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Development and Characterization of Ti/TiN/Al Film Compensation Resistor with Low Resistance\",\"authors\":\"Wei Zhang, Xiulan Cheng, Xiaodong Wang\",\"doi\":\"10.1109/CICTA.2018.8706074\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Low compensation Ti/TiN/Al film resistor including resistance and two pads was designed and fabricated with one step of lithography and metal sputter. The fabricated 8$\\\\mu$m width near 50$\\\\Omega$ resistor was stable and precise after annealing, which can be loaded with 8V DC voltage for over 60 minutes.\",\"PeriodicalId\":186840,\"journal\":{\"name\":\"2018 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)\",\"volume\":\"30 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CICTA.2018.8706074\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CICTA.2018.8706074","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

采用光刻和金属溅射一步法制备了低补偿Ti/TiN/Al薄膜电阻器。在50 $\Omega$附近制作的8 $\mu$ m宽度电阻经退火后稳定、精确，可在8V直流电压下加载60分钟以上。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Development and Characterization of Ti/TiN/Al Film Compensation Resistor with Low Resistance

Low compensation Ti/TiN/Al film resistor including resistance and two pads was designed and fabricated with one step of lithography and metal sputter. The fabricated 8$\mu$m width near 50$\Omega$ resistor was stable and precise after annealing, which can be loaded with 8V DC voltage for over 60 minutes.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2018 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)

自引率

0.00%

发文量