超低阈值InAs/InGaAs量子点激光器的增益

Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092) Pub Date : 2000-09-25 DOI:10.1109/ISLC.2000.882290

P. Eliseev, H. Li, G.T. Liu, A. Stintz, T. Newell, L. Lester, K. Malloy

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引用次数: 2

摘要

半导体激光器是通过在InGaAs量子阱中包含自组装的InAs量子点(QDs)的MBE在GaAs衬底上生长的，即所谓的点状阱(DWELL)结构。基面上的量子点直径为/spl sim/15 nm，高度为/spl sim/7 nm。对几种硅片进行了详细的研究。面内网点密度为2.5x10/sup 10/或7.5x10/sup 10/ cm/sup -2/。室温下基态发射波长为1230 ~ 1250 nm，光谱FWHM为40 ~ 75 nm。我们获得并分析了具有DWELL量子点结构的超低阈值激光二极管的增益与电流密度的关系。

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Gain in ultra-low-threshold InAs/InGaAs quantum dot lasers

Semiconductor lasers are grown on a GaAs substrate by MBE containing self-assembled InAs quantum dots (QDs) in an InGaAs quantum well, the so-called dot-in-a-well (DWELL) structure. The QDs are /spl sim/15 nm in diameter in the basal plane and /spl sim/7 nm in height. Several wafers are investigated in detail. The in-plane dot density is either 2.5x10/sup 10/ or 7.5x10/sup 10/ cm/sup -2/. The ground-state emission wavelength is 1230-1250 nm at room temperature, and the spectral FWHM is from 40 to 75 nm. We obtained and analyzed the dependence of the gain on current density in ultra-low-threshold laser diodes with DWELL quantum-dot structures.

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来源期刊

Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)

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