微波辐射、弱磁场和电子辐射作用下gan: si辐射复合谱长期演化的概率物理模型

Roman Redko, Grigorii Milenin Roman Redko, Grigorii Milenin, Svitlana Redko Svitlana Redko
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引用次数: 0

摘要

研究了微波辐射(2.45 GHz)、弱磁场(60 mT)和电子辐射(4 MeV)处理对GaN:Si近表层缺陷重组过程的影响。模拟了MR、WMF和ER处理后的光致发光光谱转换的长期过程。我们的近似假设晶体缺陷子系统的演化过程是随机事件,并且随机值的分布——随机事件发生前的时间——服从威布尔-格涅坚科定律。实验数据和理论模型之间的定性和定量一致的长期观察变化引起的注意处理已获得。根据提出的方法,同样的机制可以应用于解释半导体材料经过特殊处理后的长期重组。此外,该方法能够解释MF、WMF和ER处理后光致发光光谱的非单调行为,并可用于预测注意动作的后果。关键词:微波辐射,弱磁场,电子辐射,光致发光,氮化镓
本文章由计算机程序翻译,如有差异,请以英文原文为准。
PROBABILISTIC-PHYSICAL MODEL OF GAN:SI RADIATION RECOMBINATION SPECTRA LONG-TERM EVOLUTION DUE TO MICROWAVE RADIATION, WEAK MAGNETIC FIELD AND ELECTRON RADIATION TREATMENTS
The influence of microwave radiation (MR) (2.45 GHz), weak magnetic field (WMF) (60 mT) and electron radiation (ER) (4 MeV) treatments on processes of defects reorganization in near-surface layers of GaN:Si have been studied. Long-term processes of photoluminescence spectra transformations after MR, WMF and ER treatments have been modeled. Our approximation assumes that evolution processes in the defect subsystem of a crystal are random events, and distribution of the random value – the time before a random event – is a subject to the Weibull-Gnedenko law. Qualitative and quantitative agreements between experimental data and theoretical models of long-term observed changes caused by noted treatments have been obtained. According to the proposed approach, the same mechanism could be applied for explanation long-term reorganizations after noted treatments semiconductor material. Moreover, this approach enables to explain non-monotonous behavior of photoluminescence spectra after MF, WMF and ER treatments and could be applied to prediction the consequences of noted actions. Keywords: Microwave radiation, weak magnetic field, electron radiation, photoluminescence, gallium nitride.
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