{"title":"亚阈值SRAM的软误差抗扰性","authors":"M. Hashimoto","doi":"10.1109/ASICON.2013.6811841","DOIUrl":null,"url":null,"abstract":"This paper discusses soft error immunity of subthreshold SRAM presenting neutron- and alpha-induced soft error rates (SER) in 65-nm 10T SRAM over a wide range of supply voltages from 1.0 to 0.3 V. The results show that the neutron-induced SER at 0.3 V is 7.8 times as high as that at 1.0 V. The measured multiple cell upsets (MCUs) included 8-bit MCU. With 0.4V operation of the SRAM under test, protons are not dominant secondary particles causing SEU, but this paper points out that protons must be considered for future near-threshold computing. The alpha-induced SER at 0.3V is 6x higher than that at 1.0V. These results can contribute to reliability estimation and enhancement in subthreshold circuit design.","PeriodicalId":150654,"journal":{"name":"2013 IEEE 10th International Conference on ASIC","volume":"51 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Soft error immunity of subthreshold SRAM\",\"authors\":\"M. Hashimoto\",\"doi\":\"10.1109/ASICON.2013.6811841\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper discusses soft error immunity of subthreshold SRAM presenting neutron- and alpha-induced soft error rates (SER) in 65-nm 10T SRAM over a wide range of supply voltages from 1.0 to 0.3 V. The results show that the neutron-induced SER at 0.3 V is 7.8 times as high as that at 1.0 V. The measured multiple cell upsets (MCUs) included 8-bit MCU. With 0.4V operation of the SRAM under test, protons are not dominant secondary particles causing SEU, but this paper points out that protons must be considered for future near-threshold computing. The alpha-induced SER at 0.3V is 6x higher than that at 1.0V. These results can contribute to reliability estimation and enhancement in subthreshold circuit design.\",\"PeriodicalId\":150654,\"journal\":{\"name\":\"2013 IEEE 10th International Conference on ASIC\",\"volume\":\"51 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE 10th International Conference on ASIC\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ASICON.2013.6811841\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE 10th International Conference on ASIC","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASICON.2013.6811841","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
This paper discusses soft error immunity of subthreshold SRAM presenting neutron- and alpha-induced soft error rates (SER) in 65-nm 10T SRAM over a wide range of supply voltages from 1.0 to 0.3 V. The results show that the neutron-induced SER at 0.3 V is 7.8 times as high as that at 1.0 V. The measured multiple cell upsets (MCUs) included 8-bit MCU. With 0.4V operation of the SRAM under test, protons are not dominant secondary particles causing SEU, but this paper points out that protons must be considered for future near-threshold computing. The alpha-induced SER at 0.3V is 6x higher than that at 1.0V. These results can contribute to reliability estimation and enhancement in subthreshold circuit design.
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