Simulation and Optimization Performance of GaAs Homojunction Solar Cell with BSF Layer

our work is devoted to the study of the optimization of a GaAs solar cell (homojunction) of n+pp+ type of 1cm2 surface. It consists, mainly, of an emitting layer, a base of p-type and a heavily doped p+ type BSF layer and a double antireflection layer (MgF2/ZnS). Among the factors that influence the energy efficiency of solar cells are the technological parameters (Doping concentration, thickness) and for this purpose we try to find in this work the influence of these technological parameters (doping, thickness) of the solar cell on the performance of this cell. The optimum configuration of the device shows an efficiency of 26.80% under the AM1.5G spectrum and one sun.