第二代双栅MOS晶闸管

8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings Pub Date : 1996-05-20 DOI:10.1109/ISPSD.1996.509464

N. Iwamuro, Y. Harada, T. Iwaana, Y. Hoshi, Y. Seki

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引用次数: 4

摘要

提出了具有900 V阻断能力的第二代双栅MOS晶闸管(2nd gen.-DGMOS)，实现了极好的导通压降与关断损耗之间的权衡特性，具有很高的关断能力，首次克服了IGBT的缺点。在10a (71.3 A/cm/sup 2/)下，成功地实现了1.29 V的优越导通电压降(Von)，关断损耗(Eoff)为101 /spl mu/J。这些值的Von, Eoff表明更好的权衡特性比IGBT。此外，值得注意的是，第二代-DGMOS在电压谐振电路中实现了更好的关断能力，约为500 A/cm/sup 2/，是传统DGMOS的3.0倍。

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2nd generation dual gate MOS thyristor

2nd generation dual gate MOS thyristor (2nd gen.-DGMOS) with 900 V blocking capability are presented to realize an extremely excellent trade-off characteristic between an on-state voltage drop and a turn-off loss with a high turn-off capability and to overcome the IGBT's characteristics for the first time. A superior on-state voltage drop (Von) of 1.29 V at 10 A(71.3 A/cm/sup 2/) with the turn-off loss (Eoff) of 101 /spl mu/J is successfully achieved. These values of Von, Eoff indicate the much superior trade-off characteristic to the IGBT. Furthermore, it should be noted that the 2nd gen.-DGMOS achieves better turn-off capability of approximately 500 A/cm/sup 2/ in a voltage resonant circuit, which is 3.0 times higher than that of the conventional DGMOS.

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8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings

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