ZnCdHgTe薄膜及ZnCdHgTe基异质结构参数的数值模拟

The Fourth International Conference on Advanced Semiconductor Devices and Microsystem Pub Date : 2002-12-16 DOI:10.1109/ASDAM.2002.1088485

G. Khlyap, P. Sydorchuk

{"title":"ZnCdHgTe薄膜及ZnCdHgTe基异质结构参数的数值模拟","authors":"G. Khlyap, P. Sydorchuk","doi":"10.1109/ASDAM.2002.1088485","DOIUrl":null,"url":null,"abstract":"Two simple calculation techniques are proposed for numerical modeling and estimation of the main parameters determining the operational reliability of active elements based on A/sup 2/B/sup 6/ materials. In particular, room-temperature processes of charge carrier transport accounting for inhomogeneities of epitaxial film surfaces and the work function of the heterostructures based on the narrow-gap solid solution ZnCdHgTe are reported. The calculation algorithm is also presented.","PeriodicalId":179900,"journal":{"name":"The Fourth International Conference on Advanced Semiconductor Devices and Microsystem","volume":"274 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Numerical simulation of parameters of ZnCdHgTe films and ZnCdHgTe-based heterostructures\",\"authors\":\"G. Khlyap, P. Sydorchuk\",\"doi\":\"10.1109/ASDAM.2002.1088485\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Two simple calculation techniques are proposed for numerical modeling and estimation of the main parameters determining the operational reliability of active elements based on A/sup 2/B/sup 6/ materials. In particular, room-temperature processes of charge carrier transport accounting for inhomogeneities of epitaxial film surfaces and the work function of the heterostructures based on the narrow-gap solid solution ZnCdHgTe are reported. The calculation algorithm is also presented.\",\"PeriodicalId\":179900,\"journal\":{\"name\":\"The Fourth International Conference on Advanced Semiconductor Devices and Microsystem\",\"volume\":\"274 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-12-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"The Fourth International Conference on Advanced Semiconductor Devices and Microsystem\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ASDAM.2002.1088485\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"The Fourth International Conference on Advanced Semiconductor Devices and Microsystem","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASDAM.2002.1088485","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

基于A/sup 2/B/sup 6/材料，提出了两种简单的计算方法，用于数值模拟和估计决定有源元件运行可靠性的主要参数。本文特别报道了考虑外延膜表面非均匀性的电荷载流子室温输运过程和基于窄隙固溶体ZnCdHgTe的异质结构的功函数。并给出了计算算法。

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Numerical simulation of parameters of ZnCdHgTe films and ZnCdHgTe-based heterostructures

Two simple calculation techniques are proposed for numerical modeling and estimation of the main parameters determining the operational reliability of active elements based on A/sup 2/B/sup 6/ materials. In particular, room-temperature processes of charge carrier transport accounting for inhomogeneities of epitaxial film surfaces and the work function of the heterostructures based on the narrow-gap solid solution ZnCdHgTe are reported. The calculation algorithm is also presented.

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The Fourth International Conference on Advanced Semiconductor Devices and Microsystem

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