带倍频器的全集成电容交叉耦合d类振荡器

2020 International Workshop on Electromagnetics: Applications and Student Innovation Competition (iWEM) Pub Date : 2020-08-26 DOI:10.1109/iWEM49354.2020.9237403

Ho‐Chang Lee, S. Jang, Yu-Chi Wang

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引用次数: 0

摘要

这封信设计了一个d类振荡器，在台积电标准0.18µm BiCMOS工艺中实现了倍频器。模具面积为1x1 mm2。当电源电压低于标称阈值电压0.4 V时，n核振荡器输出2.80 GHz频率源。该d类倍频振荡器由并联LC谐振器和电容交叉耦合MOSFET对组成，具有感应栅电压启动，可在较短时间内将fet切换到深截止区域，从而实现d类模式工作。

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Fully-integrated Capacitive Cross-Coupled Class-D Oscillator with Frequency Doubler

This letter designs a class-D oscillator with frequency doubler implemented in the TSMC standard 0.18 µm BiCMOS processes. The die area is 1x1 mm2. At the supply voltage of 0.4 V below the nominal threshold voltage, the n-core oscillator outputs a frequency source at 2.80 GHz. This class-D oscillator with frequency doubler is made of a parallel LC resonator and a capacitive cross-coupled MOSFET pair with inductive gate voltage booting, which enables the class-D mode operation by switching the FETs to deep cut-off region in shorter time.

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2020 International Workshop on Electromagnetics: Applications and Student Innovation Competition (iWEM)

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