J. Yeh, F. Chen, D. Chao, Wen-Han Wang, Yi-Chan Chen, Chain-Ming Lee, M. Tsai, M. Kao
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A simulation procedure using the conventional thermal-electric finite element method for the phase change memory has been developed. By introducing a defect on the amorphous chalcogenide of a reset phase change memory, the snapback by hot filament due to thermal runaway has been investigated by the numerical simulations with three-dimensional model.
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