恒损耗微型45nm RF-CMOS 24 GHz移相器

2009 IEEE International Conference on Microwaves, Communications, Antennas and Electronics Systems Pub Date : 2009-11-01 DOI:10.1109/COMCAS.2009.5386073

T. Zlotnikov, O. Degani, Y. Nemirovsky

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引用次数: 2

摘要

我们提出了一种集成无源模拟移相器的设计和表征，该移相器采用商用45nm RF-CMOS工艺，频率为24GHz。该设计基于众所周知的RC桥拓扑结构，该拓扑结构针对相位和频率的最大相移和最小幅度响应变化进行了优化。相位通过变容管上的直流电压变化来控制，在24GHz时产生60º的最大相移和0.1 dB的幅度变化。移相器电路的尺寸(不包括焊盘和输入/输出缓冲器)为40×50µm2。

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Constant loss miniature 45nm RF-CMOS 24 GHz phase shifter

We present design and characterization of an integrated passive analog phase shifter at 24GHz in a commercially available 45 nm RF-CMOS process. The design is based on a well known RC bridge topology which was optimized for maximum phase shift and minimal amplitude response variation versus phase and frequency. Phase is controlled by varying DC voltage on a varactor, resulting in 60º maximum phase shift with 0.1 dB amplitude variation at 24GHz. The size of the phase shifter circuit excluding pads and input/output buffers is 40×50 µm2.

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来源期刊

2009 IEEE International Conference on Microwaves, Communications, Antennas and Electronics Systems

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