10线微带结构串扰的NGD分析

Lili Wu, B. Ravelo, F. Wan
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引用次数: 0

摘要

本文研究了“1”形线与“0”形线之间的耦合效应。在“10”结构描述之后,介绍了双端口等效电路。给出了s矩阵模型。然后,给出了10结构群延迟(GD)的表达式。理论方程解释说,由于耦合,10-结构根据0线的长度在NGD中心频率周围产生带通NGD函数。用10微带结构对分析模型进行了验证。计算、模拟和实测结果具有良好的相关性。10样机表现为带通NGD函数,中心频率为2.7 GHz, NGD值为-6 ns,插入损耗为6 dB。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
NGD Analysis of 10-Line Microstrip Structure Crosstalk
An analysis of coupling effect between "1" and "0" shape lines is studied in this paper. After the "10" structure description, the two-port equivalent circuit is introduced. The S-matrix model is presented. Then, the 10-structure group delay (GD) is expressed. The theoretical equation explains that because of coupling, the 10-structure generates a bandpass NGD function around an NGD center frequency depending on the length of the 0 line. The analytical model is validated with a 10-microstrip structure. The calculated, simulated and measured results are in good correlation. The 10 prototype behaves as bandpass NGD function with 2.7 GHz center frequency, -6 ns NGD value with 6 dB insertion loss.
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