量子膜:未来电子学的新材料平台

A. Javey
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引用次数: 0

摘要

在过去的几年里,电子器件固有的尺度限制推动了高载流子迁移率半导体作为硅替代品的探索,以进一步提高器件性能。为了保证有效的栅极控制,需要超薄体厚度的半导体。在这种状态下,强量子约束通常起作用;因此,我们把这些超薄化合物半导体膜称为量子膜(QMs)。结合化合物半导体的高迁移率和成熟的硅技术,我们研究了在硅衬底上异质集成的化合物量子膜。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Quantum membranes: A new materials platform for future electronics
Over the past several years, the inherent scaling limitations of electron devices have fueled the exploration of high carrier mobility semiconductors as a Si replacement to further enhance the device performance. To ensure effective gate control, semiconductors with ultrathin body thickness are needed. At such regime, strong quantum confinement usually comes into play; therefore, we call these ultrathin compound semiconductor membranes as quantum membranes (QMs). Compound quantum membranes heterogeneously integrated on Si substrates have been studied by us, combining the high mobility of compound semiconductors and the well-established Si technology.
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