{"title":"光折变材料中二波和四波混频过程的优化","authors":"K. Walsh, P. Foote, T. J. Hall","doi":"10.1117/12.941606","DOIUrl":null,"url":null,"abstract":"In this paper we discuss enhancement techniques for use with BSO and Ga As. These techniques include application of electric fields both a.c. and d.c. We consider the effects of crystal orientation and of beam polarisation and present results for two wave mixing in BSO and Ga As. For Ga As results we propose absorption gratings to fully explain our results. We show that the 43m structure of Ga As makes,it ideally suited for a four-wave mixing configuration with positive feedback.","PeriodicalId":127161,"journal":{"name":"Hague International Symposium","volume":"201 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1987-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Optimisation Of Two And Four Wave Mixing Processes In Photorefractive Materials\",\"authors\":\"K. Walsh, P. Foote, T. J. Hall\",\"doi\":\"10.1117/12.941606\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper we discuss enhancement techniques for use with BSO and Ga As. These techniques include application of electric fields both a.c. and d.c. We consider the effects of crystal orientation and of beam polarisation and present results for two wave mixing in BSO and Ga As. For Ga As results we propose absorption gratings to fully explain our results. We show that the 43m structure of Ga As makes,it ideally suited for a four-wave mixing configuration with positive feedback.\",\"PeriodicalId\":127161,\"journal\":{\"name\":\"Hague International Symposium\",\"volume\":\"201 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1987-10-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Hague International Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1117/12.941606\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Hague International Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.941606","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Optimisation Of Two And Four Wave Mixing Processes In Photorefractive Materials
In this paper we discuss enhancement techniques for use with BSO and Ga As. These techniques include application of electric fields both a.c. and d.c. We consider the effects of crystal orientation and of beam polarisation and present results for two wave mixing in BSO and Ga As. For Ga As results we propose absorption gratings to fully explain our results. We show that the 43m structure of Ga As makes,it ideally suited for a four-wave mixing configuration with positive feedback.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
