{"title":"新型无ga InAs/InAsSb超晶格红外光电探测器","authors":"J. Perez, Q. Durlin, C. Cervera, P. Christol","doi":"10.5220/0006634002320237","DOIUrl":null,"url":null,"abstract":"We studied Ga-free InAs/InAsSb type-II superlattice (T2SL) in terms of period, thickness and antimony composition as a photon absorbing active layer (AL) of a suitable XBn structure for full mid-wavelength infrared domain (MWIR, 3-5μm) detection. The SL photodetector structures were fabricated by molecular beam epitaxy (MBE) on n-type GaSb substrate and exhibited cut-off wavelength between 5μm and 5.5μm at 150K. Electro-optical and electrical results of the device are reported and compared to the usual InSb","PeriodicalId":294758,"journal":{"name":"International Conference on Photonics, Optics and Laser Technology","volume":"24 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-01-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":"{\"title\":\"New Ga-Free InAs/InAsSb Superlattice Infrared Photodetector\",\"authors\":\"J. Perez, Q. Durlin, C. Cervera, P. Christol\",\"doi\":\"10.5220/0006634002320237\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We studied Ga-free InAs/InAsSb type-II superlattice (T2SL) in terms of period, thickness and antimony composition as a photon absorbing active layer (AL) of a suitable XBn structure for full mid-wavelength infrared domain (MWIR, 3-5μm) detection. The SL photodetector structures were fabricated by molecular beam epitaxy (MBE) on n-type GaSb substrate and exhibited cut-off wavelength between 5μm and 5.5μm at 150K. Electro-optical and electrical results of the device are reported and compared to the usual InSb\",\"PeriodicalId\":294758,\"journal\":{\"name\":\"International Conference on Photonics, Optics and Laser Technology\",\"volume\":\"24 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-01-25\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"10\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Conference on Photonics, Optics and Laser Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.5220/0006634002320237\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Conference on Photonics, Optics and Laser Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.5220/0006634002320237","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
New Ga-Free InAs/InAsSb Superlattice Infrared Photodetector
We studied Ga-free InAs/InAsSb type-II superlattice (T2SL) in terms of period, thickness and antimony composition as a photon absorbing active layer (AL) of a suitable XBn structure for full mid-wavelength infrared domain (MWIR, 3-5μm) detection. The SL photodetector structures were fabricated by molecular beam epitaxy (MBE) on n-type GaSb substrate and exhibited cut-off wavelength between 5μm and 5.5μm at 150K. Electro-optical and electrical results of the device are reported and compared to the usual InSb
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