{"title":"用于5G通信的0.15 μm GaAs pHEMT毫米波超宽带功率放大器","authors":"B. Huang, Z. Fu, Kun-You Lin","doi":"10.23919/apmc55665.2022.10000027","DOIUrl":null,"url":null,"abstract":"A millimeter-wave (mmW) ultra-wideband power amplifier (PA) fabricated in 0.15-μm GaAs pHEMT process is proposed. The equivalent magnetically-coupled resonator (MCR) is adopted to obtain wideband power performance. The input and inter-stage matching network is designed for small-signal gain-flatness to achieve a wideband small-signal response. This PA achieves a saturated output power (Psat) of 25.1 dBm and a peak power-added efficiency $(\\text{PAE}_{\\max})$ of 33.6%. Besides, 3-dB small-signal bandwidth and 1-dB Psat bandwidth are 75% and 51%, respectively.","PeriodicalId":219307,"journal":{"name":"2022 Asia-Pacific Microwave Conference (APMC)","volume":"46 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-11-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A Millimeter-Wave Ultra-Wide Band Power Amplifier in 0.15-μm GaAs pHEMT for 5G Communication\",\"authors\":\"B. Huang, Z. Fu, Kun-You Lin\",\"doi\":\"10.23919/apmc55665.2022.10000027\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A millimeter-wave (mmW) ultra-wideband power amplifier (PA) fabricated in 0.15-μm GaAs pHEMT process is proposed. The equivalent magnetically-coupled resonator (MCR) is adopted to obtain wideband power performance. The input and inter-stage matching network is designed for small-signal gain-flatness to achieve a wideband small-signal response. This PA achieves a saturated output power (Psat) of 25.1 dBm and a peak power-added efficiency $(\\\\text{PAE}_{\\\\max})$ of 33.6%. Besides, 3-dB small-signal bandwidth and 1-dB Psat bandwidth are 75% and 51%, respectively.\",\"PeriodicalId\":219307,\"journal\":{\"name\":\"2022 Asia-Pacific Microwave Conference (APMC)\",\"volume\":\"46 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-11-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 Asia-Pacific Microwave Conference (APMC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/apmc55665.2022.10000027\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 Asia-Pacific Microwave Conference (APMC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/apmc55665.2022.10000027","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A Millimeter-Wave Ultra-Wide Band Power Amplifier in 0.15-μm GaAs pHEMT for 5G Communication
A millimeter-wave (mmW) ultra-wideband power amplifier (PA) fabricated in 0.15-μm GaAs pHEMT process is proposed. The equivalent magnetically-coupled resonator (MCR) is adopted to obtain wideband power performance. The input and inter-stage matching network is designed for small-signal gain-flatness to achieve a wideband small-signal response. This PA achieves a saturated output power (Psat) of 25.1 dBm and a peak power-added efficiency $(\text{PAE}_{\max})$ of 33.6%. Besides, 3-dB small-signal bandwidth and 1-dB Psat bandwidth are 75% and 51%, respectively.
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