超高频氮化镓纳米真空电子器件

2021 22nd International Vacuum Electronics Conference (IVEC) Pub Date : 2021-04-27 DOI:10.1109/IVEC51707.2021.9722483

Yazhou Wei, Mo Li, Yong Luo, Jian Zhang

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摘要

考虑器件结构的影响，通过理论模拟研究了氮化镓纳米真空电子器件的性能。通过选择合适的风道和宽高比，可以获得低导通电压和强输出电流的GaN NVED，与实验结果吻合良好。由于电子在非常小的气隙中自由输运，GaN NVED可以在太赫兹波段提供高频输出。

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Ultra-High Frequency GaN Nanoscale Vacuum Electronic Devices

The performances of the GaN nanoscale vacuum electronic devices (NVEDs) were investigated in this paper by theoretical simulation, considering the effects of the device structures. By choosing a proper air channel and aspect ratio, a GaN NVED with a low turn-on voltage and a strong output current can be achieved, showing good agreements with the experiments. The GaN NVED can provide high frequency output in THz band, due to the free transport of electrons in the very small air gap.

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2021 22nd International Vacuum Electronics Conference (IVEC)

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