{"title":"远距离等离子体增强化学气相沉积制备ge1 - xsnx合金","authors":"B. Claflin, G. Grzybowski, J. Duran","doi":"10.1109/SiPhotonics55903.2023.10141897","DOIUrl":null,"url":null,"abstract":"Remote plasma-enhanced CVD is used to grow Ge<inf>1-x</inf>Sn<inf>x</inf>, on Ge, Si, and Al<inf>2</inf>O<inf>3</inf> substrates with x≤0.19 and d > 1 µm. The structural, optical, and electrical properties of these alloys are characterized by XRD, AFM, spectroscopic ellipsometry, and Hall-effect. Characteristics of heterostructure p-n Ge<inf>1-x</inf>Sn<inf>x</inf>/Si devices are presented.","PeriodicalId":105710,"journal":{"name":"2023 IEEE Silicon Photonics Conference (SiPhotonics)","volume":"55 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Growth of Ge1-xSnxAlloys by Remote Plasma-Enhanced Chemical Vapor Deposition\",\"authors\":\"B. Claflin, G. Grzybowski, J. Duran\",\"doi\":\"10.1109/SiPhotonics55903.2023.10141897\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Remote plasma-enhanced CVD is used to grow Ge<inf>1-x</inf>Sn<inf>x</inf>, on Ge, Si, and Al<inf>2</inf>O<inf>3</inf> substrates with x≤0.19 and d > 1 µm. The structural, optical, and electrical properties of these alloys are characterized by XRD, AFM, spectroscopic ellipsometry, and Hall-effect. Characteristics of heterostructure p-n Ge<inf>1-x</inf>Sn<inf>x</inf>/Si devices are presented.\",\"PeriodicalId\":105710,\"journal\":{\"name\":\"2023 IEEE Silicon Photonics Conference (SiPhotonics)\",\"volume\":\"55 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2023-04-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2023 IEEE Silicon Photonics Conference (SiPhotonics)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SiPhotonics55903.2023.10141897\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2023 IEEE Silicon Photonics Conference (SiPhotonics)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SiPhotonics55903.2023.10141897","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Growth of Ge1-xSnxAlloys by Remote Plasma-Enhanced Chemical Vapor Deposition
Remote plasma-enhanced CVD is used to grow Ge1-xSnx, on Ge, Si, and Al2O3 substrates with x≤0.19 and d > 1 µm. The structural, optical, and electrical properties of these alloys are characterized by XRD, AFM, spectroscopic ellipsometry, and Hall-effect. Characteristics of heterostructure p-n Ge1-xSnx/Si devices are presented.
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