A. Levi, R. Nottenburg, B. Jalali, A. Cho, M. Panish
{"title":"物理和高速设备","authors":"A. Levi, R. Nottenburg, B. Jalali, A. Cho, M. Panish","doi":"10.1109/ICIPRM.1990.202977","DOIUrl":null,"url":null,"abstract":"It is shown how an understanding of the physics of nonequilibrium electron transport in III-V semiconductors can usefully be applied to determining the limits of n-p-n InP/In/sub 0.53/Ga/sub 0.47/As heterostructure bipolar transistor device performance. For example, it is seen that nonequilibrium transport in In/sub 0.53/Ga/sub 0.47/As improves static transistor characteristics such as current gain and minimum lateral dimensions. In addition, the fastest bipolar transistors make use of high velocity Gamma -valley nonequilibrium electron transport in In/sub 0.53/Ga/sub 0.47/As. A thin, highly-doped base with an impurity concentration p>10/sup 20/ cm/sup -3/ has a negligible base transit time and collector transit delay dominates the intrinsic response. Ultra-high-speed heterostructure bipolar transistors perform best with small signals and low collector voltages.<<ETX>>","PeriodicalId":138960,"journal":{"name":"International Conference on Indium Phosphide and Related Materials","volume":"8 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Physics and high speed devices\",\"authors\":\"A. Levi, R. Nottenburg, B. Jalali, A. Cho, M. Panish\",\"doi\":\"10.1109/ICIPRM.1990.202977\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"It is shown how an understanding of the physics of nonequilibrium electron transport in III-V semiconductors can usefully be applied to determining the limits of n-p-n InP/In/sub 0.53/Ga/sub 0.47/As heterostructure bipolar transistor device performance. For example, it is seen that nonequilibrium transport in In/sub 0.53/Ga/sub 0.47/As improves static transistor characteristics such as current gain and minimum lateral dimensions. In addition, the fastest bipolar transistors make use of high velocity Gamma -valley nonequilibrium electron transport in In/sub 0.53/Ga/sub 0.47/As. A thin, highly-doped base with an impurity concentration p>10/sup 20/ cm/sup -3/ has a negligible base transit time and collector transit delay dominates the intrinsic response. Ultra-high-speed heterostructure bipolar transistors perform best with small signals and low collector voltages.<<ETX>>\",\"PeriodicalId\":138960,\"journal\":{\"name\":\"International Conference on Indium Phosphide and Related Materials\",\"volume\":\"8 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1990-04-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Conference on Indium Phosphide and Related Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.1990.202977\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Conference on Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1990.202977","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
It is shown how an understanding of the physics of nonequilibrium electron transport in III-V semiconductors can usefully be applied to determining the limits of n-p-n InP/In/sub 0.53/Ga/sub 0.47/As heterostructure bipolar transistor device performance. For example, it is seen that nonequilibrium transport in In/sub 0.53/Ga/sub 0.47/As improves static transistor characteristics such as current gain and minimum lateral dimensions. In addition, the fastest bipolar transistors make use of high velocity Gamma -valley nonequilibrium electron transport in In/sub 0.53/Ga/sub 0.47/As. A thin, highly-doped base with an impurity concentration p>10/sup 20/ cm/sup -3/ has a negligible base transit time and collector transit delay dominates the intrinsic response. Ultra-high-speed heterostructure bipolar transistors perform best with small signals and low collector voltages.<>