采用130nm工艺的CMOS LNA,采用谐波抑制技术改善了噪声系数和线性度

Madhura Khisti, S. Turkane
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引用次数: 2

摘要

提出了一种采用130nm CMOS工艺的Cascode差分LNA。线性增强是通过抑制三阶谐波分量的产生来实现的。为了消除三次谐波分量,采用了从共栅漏极节点到共栅晶体管源极节点的RC反馈。为了实现低噪声系数,采用级联晶体管。通过比较经典LNA和所提LNA的设计,验证了该技术的有效性。LNA的噪声系数为2.435dB,输入参考P1dB -4.18dBm,增益为19dB。从这些测量结果中,我们成功地证明了LNA具有最小的噪声系数,并且是线性的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
CMOS LNA using 130nm process with improved Noise Figure and linearity using Harmonic rejection technique
A Cascode differential LNA using 130nm CMOS process is proposed. The linearity enhancement is achieved by, restrained generation of 3rd order Harmonic component. To cancel the 3rd Harmonic component, a RC feedback from Drain node of common-gate to the Source node of common-gate transistor is used. To achieve low Noise Figure, Cascode stage transistors are used. This technique is verified by comparing the design of Classical LNA and the Proposed LNA. The LNA achieves Noise Figure 2.435dB, Input-referred P1dB -4.18dBm and Gain 19dB. From these measured result the Proposed LNA successfully proves that it has minimum Noise Figure and is linear.
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