M. Tian, T.-W. F. Chang, Jiahua Zhang, B. Luo, Shi-hua Huang, Jiaqi Yu
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Thermally Induced Hole-filling Process In Donor-acceptor Electron Transfer System
Photon-gated spectral hole-burning in the organic donor-acceptor electron transfer system has attracted extensively interests because of its application background in frequency-domain optical storage. Several materials have been investigated from the aspects in hole-burning process[1–3], such as photon-gating effect, temperature dependence of hole width and hole-burning efficiency. A few works on hole-filling processes have been done[4], however, the filling mechanisms are not clear now.
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