{"title":"用于混合信号应用的MIM电容器的电介质(氧化物，氮化物，氧-氮化物)的电学特性","authors":"J. Prasad, M. Anser, M. Thomason","doi":"10.1109/ISDRS.2003.1272117","DOIUrl":null,"url":null,"abstract":"Electrical characterization of the MIM (metal-insulator-metal) capacitor for RF circuits used in mixed signal devices is presented in this paper. Characterization and evaluation of Nitride, Oxide or Oxynitride as the dielectric materials is also presented. MIM module structure is a six-mask process with three levels of metallization. Capacitance as a function of dielectric film thickness for various dielectric materials and alloying effects on the silicon nitride MIM capacitor linearity are presented. Hysteresis characterization and modeling is used to improve analog circuit performance.","PeriodicalId":369241,"journal":{"name":"International Semiconductor Device Research Symposium, 2003","volume":"86 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Electrical characterization of dielectrics (oxide, nitride, oxy-nitride) for use in MIM capacitors for mixed signal applications\",\"authors\":\"J. Prasad, M. Anser, M. Thomason\",\"doi\":\"10.1109/ISDRS.2003.1272117\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Electrical characterization of the MIM (metal-insulator-metal) capacitor for RF circuits used in mixed signal devices is presented in this paper. Characterization and evaluation of Nitride, Oxide or Oxynitride as the dielectric materials is also presented. MIM module structure is a six-mask process with three levels of metallization. Capacitance as a function of dielectric film thickness for various dielectric materials and alloying effects on the silicon nitride MIM capacitor linearity are presented. Hysteresis characterization and modeling is used to improve analog circuit performance.\",\"PeriodicalId\":369241,\"journal\":{\"name\":\"International Semiconductor Device Research Symposium, 2003\",\"volume\":\"86 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-12-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Semiconductor Device Research Symposium, 2003\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISDRS.2003.1272117\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Semiconductor Device Research Symposium, 2003","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISDRS.2003.1272117","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Electrical characterization of dielectrics (oxide, nitride, oxy-nitride) for use in MIM capacitors for mixed signal applications
Electrical characterization of the MIM (metal-insulator-metal) capacitor for RF circuits used in mixed signal devices is presented in this paper. Characterization and evaluation of Nitride, Oxide or Oxynitride as the dielectric materials is also presented. MIM module structure is a six-mask process with three levels of metallization. Capacitance as a function of dielectric film thickness for various dielectric materials and alloying effects on the silicon nitride MIM capacitor linearity are presented. Hysteresis characterization and modeling is used to improve analog circuit performance.
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