K. Kato, K. Suzuki, S. Kayukawa, K. Tanaka, Yiping Guo
{"title":"烷氧基衍生BaTiO3薄膜在LaNiO3/Pt/TiOx/Si(100)上的介电性能","authors":"K. Kato, K. Suzuki, S. Kayukawa, K. Tanaka, Yiping Guo","doi":"10.1109/ISAF.2007.4393305","DOIUrl":null,"url":null,"abstract":"BaTiO3 films with higher degrees of (100) orientation were deposited using both of the heterogeneous LaNiO3 nucleation layer and homogeneous BaTiO3 buffer layer. The microstructure and dielectric properties are characterized. The temperature dependence of the dielectric properties is additionally discussed. The alkoxy-derived 1-mum thick BaTiO3 had the unique microstructure and showed predominant (100) orientation. The film showed ferroelectric to paraelectric transition around at 105degC, and improved dielectric properties. The improvement is considered to be due to the simultaneous control of crystallographic and microstructural characteristics by using the double nucleation and buffer layers.","PeriodicalId":321007,"journal":{"name":"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics","volume":"323 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Dielectric Properties of Alkoxy-Derived BaTiO3 Films on LaNiO3/Pt/TiOx/Si(100)\",\"authors\":\"K. Kato, K. Suzuki, S. Kayukawa, K. Tanaka, Yiping Guo\",\"doi\":\"10.1109/ISAF.2007.4393305\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"BaTiO3 films with higher degrees of (100) orientation were deposited using both of the heterogeneous LaNiO3 nucleation layer and homogeneous BaTiO3 buffer layer. The microstructure and dielectric properties are characterized. The temperature dependence of the dielectric properties is additionally discussed. The alkoxy-derived 1-mum thick BaTiO3 had the unique microstructure and showed predominant (100) orientation. The film showed ferroelectric to paraelectric transition around at 105degC, and improved dielectric properties. The improvement is considered to be due to the simultaneous control of crystallographic and microstructural characteristics by using the double nucleation and buffer layers.\",\"PeriodicalId\":321007,\"journal\":{\"name\":\"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics\",\"volume\":\"323 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-05-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISAF.2007.4393305\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISAF.2007.4393305","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Dielectric Properties of Alkoxy-Derived BaTiO3 Films on LaNiO3/Pt/TiOx/Si(100)
BaTiO3 films with higher degrees of (100) orientation were deposited using both of the heterogeneous LaNiO3 nucleation layer and homogeneous BaTiO3 buffer layer. The microstructure and dielectric properties are characterized. The temperature dependence of the dielectric properties is additionally discussed. The alkoxy-derived 1-mum thick BaTiO3 had the unique microstructure and showed predominant (100) orientation. The film showed ferroelectric to paraelectric transition around at 105degC, and improved dielectric properties. The improvement is considered to be due to the simultaneous control of crystallographic and microstructural characteristics by using the double nucleation and buffer layers.