二氧化硅作为MOSFET栅极堆的钝化超薄层

3rd International Conference 'Novel Applications of Wide Bandgap Layers' Abstract Book (Cat. No.01EX500) Pub Date : 2001-06-26 DOI:10.1109/WBL.2001.946588

T. Bieniek, A. Wojtkiewicz, L. Lukasiak, R. B. Beck

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引用次数: 4

摘要

这里研究了两种不同的超薄氧化物形成方法，经典热氧化和Grilox(见Borsoni等人，微电子可靠性)。结果表明，对于Si/sub 3/N/sub 4/以及HfO/sub 2/(仍在研究中)的钝化层技术，钝化层的质量对栅极堆的整体性能都有至关重要的影响。给出了用于示例性测试器件的硅禁隙中的界面陷阱密度分布。

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Silicon dioxide as passivating, ultrathin layer in MOSFET gate stacks

Two different methods of ultrathin oxide formation are studied here, classical thermal oxidation and Grilox (see Borsoni et al., Microelectronics Reliability). It was proved that the quality of the passivating layer has a crucial influence on the overall properties of the gate stack in all cases, for the well established technology of Si/sub 3/N/sub 4/, as well as for HfO/sub 2/ (still under investigation). The interface trap density distributions in the Si forbidden gap for exemplary test devices are presented.

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3rd International Conference 'Novel Applications of Wide Bandgap Layers' Abstract Book (Cat. No.01EX500)

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