20gb /s 1:4 DEMUX近轨逻辑摆幅90nm CMOS工艺

A. Mineyama, T. Suzuki, Hiroyuki Ito, S. Amakawa, N. Ishihara, K. Masu
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引用次数: 11

摘要

提出了一种9.5 mW 20 Gb/s 40×70¿m2无电感器的90 nm CMOS工艺1:4 DEMUX。为了降低功耗和占地面积,DEMUX采用了多相时钟架构,与传统的树形结构相比,需要更少的锁存器数量和更慢的时钟速率。为了提供低电压可扩展性,锁存器采用近尾到轨的逻辑摆动。通过采用具有非常规设置的无电流源cml型锁存器,实现了无显著的速度损失。它也提供了更大的噪声裕度和消除逻辑电平转换器。在即将到来的超低电压多芯时代,这种平衡良好的可扩展设计可能会拓宽高速SerDes的应用范围。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A 20 Gb/s 1:4 DEMUX with Near-Rail-to-Rail Logic Swing in 90 nm CMOS process
A 9.5 mW 20 Gb/s 40×70 ¿m2 inductorless 1:4 DEMUX in 90 nm CMOS process is presented. In order to reduce power and area, the DEMUX uses a multi-phase clock architecture that requires a smaller number of latches operating at a slower clock rate than in the conventional tree architecture. To provide low-voltage scalability, the latches operate with a near-tail-to-rail logic swing. It is realized without significant speed penalty by adopting current-sourceless CML-type latches with unconventional settings. It offers a larger noise margin and elimination of logic level converters too. The well-balanced scalable design could possibly broaden the applications of high-speed SerDes in the coming ultralow-voltage many-core era.
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