The role of Schottky barriers on the behavior of carbon nanotube field‐effect transistors

We discuss recent advances in the fabrication of carbon nanotube field‐effect transistors (CNTFETs) and demonstrate that already they can outperform corresponding silicon devices. We then reexamine the switching mechanism of the nanotube devices and find it to be different than that of Si MOSFETs. Specifically, we present evidence that the CNTFETs are Schottky barrier (SB) transistors. A number of outstanding questions, such as the p‐type nature of most CNTFETs and the effects of gases on their function, can be answered on the basis of the SB model. Finally, we briefly discuss the unique characteristics of the SBs in 1D systems on the basis of studies on carbon and boron nitride nanotubes.