双量子势垒提高HfON捕获存储器的高温保持性和耐久性

2008 9th International Conference on Solid-State and Integrated-Circuit Technology Pub Date : 2008-12-30 DOI:10.1109/ICSICT.2008.4734666

A. Chin, H.J. Yang, S.H. Lin, C. Liao, W. Chen, F. Yeh

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引用次数: 0

摘要

我们比较了TaN/Ir3Si-[HfAlO-LaAlO3]- hfon0.2 -[HfAlO-SiO2]- si双量子势垒电荷捕获存储器与单势垒非易失性存储器MONOS器件在接近EOT时的器件性能。在150°C，快速100°s和低±9 V P/E下，双量子势垒电荷捕获装置显示出3.2 V的初始电压和2.7 V的10年外推保留率。这种保留衰减率比单势垒器件有很大提高。

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Improved high temperature retention and endurance in HfON trapping memory with double quantum barriers

We have compared the device performance of double-quantum-barrier charge-trapping memory of a TaN/Ir₃Si-[HfAlO-LaAlO₃]-HfON_0.2-[HfAlO-SiO₂]-Si device with single barrier non-volatile memory MONOS devices at close EOT. At 150°C under fast 100 ¿s and low ±9 V P/E, the double-quantum-barrier charge-trapping device shows a 3.2 V initial ¿V_th and 2.7 V 10-year extrapolated retention. This retention decay rate is much improved from single barrier device.

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2008 9th International Conference on Solid-State and Integrated-Circuit Technology

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