多偏置等效电路用于MOSFET建模

2017 13th International Conference on Advanced Technologies, Systems and Services in Telecommunications (TELSIKS) Pub Date : 2017-10-01 DOI:10.1109/TELSKS.2017.8246295

G. Crupi, Z. Marinković, D. Schreurs, V. Markovic, A. Caddemi

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引用次数: 1

摘要

我们报道了微波MOSFET的特性和建模。我们通过测量直流特性和高达40 GHz的多偏置散射参数来表征测试的片上晶体管。此外，我们还分析提取了一个小信号等效电路模型，该模型已根据实验数据进行了广泛和成功的验证。

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Multi-bias equivalent circuit for MOSFET modelling

We report on the characterization and modelling of a microwave MOSFET. We have characterized the tested on-wafer transistor by measuring DC characteristics and multi-bias scattering parameters up to 40 GHz. Furthermore, we have analytically extracted a small-signal equivalent circuit model that has been extensively and successfully validated against experimental data.

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来源期刊

2017 13th International Conference on Advanced Technologies, Systems and Services in Telecommunications (TELSIKS)

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