SIMOX和VLSI高速和硬应用:浮体效应和电路优化的讨论

Proceedings. SOS/SOI Technology Workshop Pub Date : 1988-10-03 DOI:10.1109/SOI.1988.95427

A. Auberton-Herve

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引用次数: 6

摘要

本文报道了在CMOS原型线环境中获得的一些结果，表明SIMOX(氧注入分离)技术与工业应用的兼容性。从VLSI应用的角度分析了器件的主要参数和电路的优化。讨论了新型浮体效应和改善SOI性能的方法。研究了高速技术和抗辐射技术。

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SIMOX and VLSI high speed and rad hard applications: discussion of floating body effects and circuits optimization

Some results obtained in a CMOS prototype line environment are reported to show the compatibility of SIMOX (separation by implantation of oxygen) technology with industrial applications. The main parameters of devices and circuits optimization are analyzed in terms of VLSI applications. New floating-body effects and solutions to improve the SOI performances are discussed. High-speed and radiation-hard technologies are examined.<>

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Proceedings. SOS/SOI Technology Workshop

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