基于GaN HEMT的CPW匹配LNA的设计与分析

2014 Eleventh International Conference on Wireless and Optical Communications Networks (WOCN) Pub Date : 2014-10-16 DOI:10.1109/WOCN.2014.6923066

S. Sarathkrishna, K. Balamurugan, M. N. Devi, M. Jayakumar

{"title":"基于GaN HEMT的CPW匹配LNA的设计与分析","authors":"S. Sarathkrishna, K. Balamurugan, M. N. Devi, M. Jayakumar","doi":"10.1109/WOCN.2014.6923066","DOIUrl":null,"url":null,"abstract":"GaN based devices are in great demand due to its rugged characteristics at extreme conditions. In this paper, design of GaN monolithic microwave integrated circuit (MMIC) low noise amplifier (LNA) with coplanar waveguide matching is presented to understand the key aspects of high gain, low noise figure and high linearity. The LNA can be used in base station technologies as frequency of interest is from 0.6-3 GHz. It delivers gain of 23 dB and noise figure 0.3 dB and OIP3 upto 51 dBm. The linear performance presented here enables reconfigurable designs of LNA over multiple octaves of bandwidth.","PeriodicalId":149158,"journal":{"name":"2014 Eleventh International Conference on Wireless and Optical Communications Networks (WOCN)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2014-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Design and analysis of GaN HEMT based LNA with CPW matching\",\"authors\":\"S. Sarathkrishna, K. Balamurugan, M. N. Devi, M. Jayakumar\",\"doi\":\"10.1109/WOCN.2014.6923066\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"GaN based devices are in great demand due to its rugged characteristics at extreme conditions. In this paper, design of GaN monolithic microwave integrated circuit (MMIC) low noise amplifier (LNA) with coplanar waveguide matching is presented to understand the key aspects of high gain, low noise figure and high linearity. The LNA can be used in base station technologies as frequency of interest is from 0.6-3 GHz. It delivers gain of 23 dB and noise figure 0.3 dB and OIP3 upto 51 dBm. The linear performance presented here enables reconfigurable designs of LNA over multiple octaves of bandwidth.\",\"PeriodicalId\":149158,\"journal\":{\"name\":\"2014 Eleventh International Conference on Wireless and Optical Communications Networks (WOCN)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-10-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 Eleventh International Conference on Wireless and Optical Communications Networks (WOCN)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/WOCN.2014.6923066\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 Eleventh International Conference on Wireless and Optical Communications Networks (WOCN)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/WOCN.2014.6923066","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 5

摘要

基于GaN的器件由于其在极端条件下的坚固特性而需求量很大。本文设计了一种具有共面波导匹配的GaN单片微波集成电路(MMIC)低噪声放大器(LNA)，了解了其高增益、低噪声系数和高线性度的关键问题。LNA可用于基站技术，因为感兴趣的频率为0.6- 3ghz。它的增益为23 dB，噪声系数为0.3 dB, OIP3高达51 dBm。这里介绍的线性性能使LNA在多个倍频带宽上的可重构设计成为可能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Design and analysis of GaN HEMT based LNA with CPW matching

GaN based devices are in great demand due to its rugged characteristics at extreme conditions. In this paper, design of GaN monolithic microwave integrated circuit (MMIC) low noise amplifier (LNA) with coplanar waveguide matching is presented to understand the key aspects of high gain, low noise figure and high linearity. The LNA can be used in base station technologies as frequency of interest is from 0.6-3 GHz. It delivers gain of 23 dB and noise figure 0.3 dB and OIP3 upto 51 dBm. The linear performance presented here enables reconfigurable designs of LNA over multiple octaves of bandwidth.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2014 Eleventh International Conference on Wireless and Optical Communications Networks (WOCN)

自引率

0.00%

发文量