高效a-Si太阳能电池的光约束和光损耗

Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997 Pub Date : 1997-09-29 DOI:10.1109/PVSC.1997.654164

Y. Hishikawa, T. Kinoshita, M. Shima, M. Tanaka, S. Kiyama, S. Tsuda, S. Nakano

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引用次数: 10

摘要

30/spl倍/40 cm/sup 2/ a- si /a- sige玻璃叠层太阳能电池子组件实现了9.5%的世界最高稳定转换效率。然而，即使在这些高效率的a-Si太阳能电池中，仍然存在显著的光损耗。有限元数值模拟结果表明，在/spl ges/800 nm处，织构a-Si太阳电池的光损耗主要来源于SnO/sub / 2的吸收，而SnO/sub / 2的吸收由于光约束效应而增强。光约束也导致金属电极的吸收增加，这是光损耗的另一个来源。

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Optical confinement and optical loss in high-efficiency a-Si solar cells

The world's highest stabilized conversion efficiency of 9.5% has been achieved for a 30/spl times/40 cm/sup 2/ a-Si/a-SiGe glass superstrate solar cell submodule. However, significant optical loss still exists even in these high-efficiency a-Si solar cells. FEM numerical simulation has shown that the primary origin of the optical loss in textured a-Si solar cells at about /spl ges/800 nm is absorption in SnO/sub 2/ which is enhanced by the optical confinement effect. Optical confinement also results in increased absorption in the metal electrode, which is another source of optical loss.

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Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997

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