Haoyang Li, Yuyang Fu, Tian-Qing Wan, Yi Lu, Ling Yang, Yi Li
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Improve the Robustness of Diffusive Memristor based True Random Number Generator via Voltage-to-Time Transformation
Fluctuations in Vth distribution can pose reliability problems for true random number generators (TRNGs). Here, we propose an explanation of the mechanism for voltage-to-time transformation scheme, which improve the reliability of TRNGs by fine-grained segmentation of time. Compared with conventional schemes, test scheme in this work can tolerate 50% cycle-to-cycle (C2C) and device-to-device (D2D) distribution shift and ensure the independence of random bits. This work provides a distinct and reliable evidence for tolerating frequent parameter shifts in voltage-to-time transformation scheme, which increase Vth robustness, reduce device requirements in practical use, and avoid redundant measurements and extra calibration in the test.