封装GaAs功率MESFET

Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits Pub Date : 1993-08-02 DOI:10.1109/CORNEL.1993.303128

N. Nguyen, J. Ibbetson, J. Yen, M. Hashemi, Utkarsh Mishra

{"title":"封装GaAs功率MESFET","authors":"N. Nguyen, J. Ibbetson, J. Yen, M. Hashemi, Utkarsh Mishra","doi":"10.1109/CORNEL.1993.303128","DOIUrl":null,"url":null,"abstract":"Utilizing a combination of low-temperature-grown Al/sub 0.3/Ga/sub 0.7/As passivation, overlapping gate, MOCVD regrowth of the source/drain contacts, and isolation by boron ion implantation, we have fabricated a GaAs MESFET with a completely encapsulated channel. Electrical characterization of the device shows that the early catastrophic on-state breakdown is suppressed. In contrast to the usually observed characteristics in GaAs MESFET, the breakdown locus of the device also has a positive slope. These improvements should allow us to bias the device at a higher operating point, thereby increasing the obtainable maximum output power in the device.<<ETX>>","PeriodicalId":129440,"journal":{"name":"Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","volume":"6 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-08-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Encapsulated GaAs power MESFET\",\"authors\":\"N. Nguyen, J. Ibbetson, J. Yen, M. Hashemi, Utkarsh Mishra\",\"doi\":\"10.1109/CORNEL.1993.303128\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Utilizing a combination of low-temperature-grown Al/sub 0.3/Ga/sub 0.7/As passivation, overlapping gate, MOCVD regrowth of the source/drain contacts, and isolation by boron ion implantation, we have fabricated a GaAs MESFET with a completely encapsulated channel. Electrical characterization of the device shows that the early catastrophic on-state breakdown is suppressed. In contrast to the usually observed characteristics in GaAs MESFET, the breakdown locus of the device also has a positive slope. These improvements should allow us to bias the device at a higher operating point, thereby increasing the obtainable maximum output power in the device.<<ETX>>\",\"PeriodicalId\":129440,\"journal\":{\"name\":\"Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits\",\"volume\":\"6 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1993-08-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CORNEL.1993.303128\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CORNEL.1993.303128","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 3

摘要

利用低温生长Al/sub 0.3/Ga/sub 0.7/As钝化、重叠栅极、源极/漏极MOCVD再生和硼离子注入隔离相结合的方法，我们制备了具有完全封装通道的GaAs MESFET。该器件的电学特性表明，早期灾难性导通击穿被抑制。与通常在GaAs MESFET中观察到的特性相反，器件的击穿轨迹也具有正斜率。这些改进应该允许我们在更高的工作点偏置器件，从而增加器件可获得的最大输出功率。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Encapsulated GaAs power MESFET

Utilizing a combination of low-temperature-grown Al/sub 0.3/Ga/sub 0.7/As passivation, overlapping gate, MOCVD regrowth of the source/drain contacts, and isolation by boron ion implantation, we have fabricated a GaAs MESFET with a completely encapsulated channel. Electrical characterization of the device shows that the early catastrophic on-state breakdown is suppressed. In contrast to the usually observed characteristics in GaAs MESFET, the breakdown locus of the device also has a positive slope. These improvements should allow us to bias the device at a higher operating point, thereby increasing the obtainable maximum output power in the device.<>

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits

自引率

0.00%

发文量