激光辅助金属有机化学气相沉积镁掺杂氮化镓在硅，蓝宝石和砷化镓

1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140) Pub Date : 1998-12-14 DOI:10.1109/COMMAD.1998.791619

H. Zuo, M. J. Paterson, E. Goldys, T. Tansley, Afifuddin

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引用次数: 0

摘要

利用激光诱导的金属有机化学气相沉积技术，在600℃的低温下制备了用于紫外光电探测器的Mg掺杂p型GaN薄膜。在室温下获得的空穴迁移率高达40 cm/sup 2/ V/sup -1/ s/sup -1/，无需任何生长后处理，具有丰富的光致发光光谱。在低温下观察到2.95 eV、2.6 eV和2.2 eV的三个主峰，只有2.6和2.2 eV的主峰在室温下存在。

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Laser assisted metalorganic chemical vapour deposition of Mg doped GaN on silicon, sapphire and GaAs

Mg doped p-type GaN films intended for UV photodetector applications have been produced by using laser-induced metalorganic chemical vapour deposition at a low temperature of 600/spl deg/C. The hole mobilities obtained are up to 40 cm/sup 2/ V/sup -1/ s/sup -1/ at room temperature without any post growth treatment and rich photoluminescence spectra are typical. Three principal peaks at 2.95 eV, 2.6 eV and 2.2 eV were observed at low temperature with only those at 2.6 and 2.2 eV persisting at room temperature.

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1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)

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