用银纳米晶嵌入PVK制备非易失性存储器

2010 2nd IEEE InternationalConference on Network Infrastructure and Digital Content Pub Date : 2010-12-03 DOI:10.1109/ICNIDC.2010.5657799

Jong-Dae Lee, Hyun-Min Seung, Kyoung-Cheol Kwon, Jea‐Gun Park

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引用次数: 0

摘要

我们一直在研究基于电双稳定性的聚合物非易失性存储电池。聚合物非易失性存储电池是在导电聚合物中嵌入银纳米晶体的4F2。聚合物非易失性记忆电池的结构为PVK(聚n -乙烯基咔唑)/银纳米晶体/铝电极之间的PVK。将银层蒸发几纳米后，采用固化工艺形成银纳米晶体。嵌入银纳米晶体的聚合物非易失性记忆电池显示，记忆magin(Ion / Ioff比)为~ 5.0×101。保持时间大于105秒。

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Fabricated nonvolatile memory with Ag nano-crystals embedded in PVK

We have been researching the polymer nonvolatile memory-cell based on electrical bi-stability. The polymer nonvolatile memory-cell was the 4F² embedded with Ag nano-crystals in conductive polymer. The structure of polymer nonvolatile memory-cell was PVK(poly(N-vinylcarbazole) / Ag nano-crystals / PVK between the Al electrodes. The Ag nano-crystals were formed by using the curing process after evaporate several nanometers of Ag layer. The polymer nonvolatile memory-cell embedded with Ag nano-crystals showed the memory magin(ratio of Ion to Ioff) is ∼5.0×10¹. The retention time is more than 10⁵ seconds.

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2010 2nd IEEE InternationalConference on Network Infrastructure and Digital Content

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