具有宽带隙材料层的电子结构形成的等离子体过程

3rd International Conference 'Novel Applications of Wide Bandgap Layers' Abstract Book (Cat. No.01EX500) Pub Date : 2001-06-26 DOI:10.1109/WBL.2001.946547

A. Jakubowski, R. B. Beck, J. Szmidt, A. Werbowy

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引用次数: 0

摘要

作者讨论了等离子体加工在标准硅与宽禁带材料技术中的作用。他们考虑了等离子体加工的具体问题及其对宽带隙半导体技术的影响。

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Plasma processes for formation of electronic structures with wide bandgap material layers

The authors discuss the role of plasma processing in standard Si vs. wide bandgap materials technology. They consider the specific problems of plasma processing and their consequences in wide band gap semiconductor technology.

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3rd International Conference 'Novel Applications of Wide Bandgap Layers' Abstract Book (Cat. No.01EX500)

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