一个0.5µm硅双极晶体管低相位噪声振荡器应用高达20 GHz

1985 IEEE MTT-S International Microwave Symposium Digest Pub Date : 1985-06-04 DOI:10.1109/MWSYM.1985.1131990

C. C. Leung, C. Snapp, V. Grande

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引用次数: 8

摘要

制作了一种射极宽度为0.5微米、射极间距为2微米的互指硅双极晶体管，其Fmax测量值大于30 GHz。使用该晶体管，已经演示了4-18 GHz和8-22 GHz基频带的低相位噪声yig调谐振荡器。

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A 0.5 µm Silicon Bipolar Transistor for Low Phase Noise Oscillator Applications Up to 20 GHz

An interdigitated silicon bipolar transistor with 0.5 micrometer emitter width and 2 micrometer emitter-emitter pitch has been fabricated which has a measured Fmax greater than 30 GHz. Low phase noise YIG-tuned oscillators with fundamental frequency bands of 4-18 and 8-22 GHz have been demonstrated using this transistor.

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来源期刊

1985 IEEE MTT-S International Microwave Symposium Digest

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