砷和氢辐照下InGaAs/(Al)GaAs的量子阱混合

1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140) Pub Date : 1998-12-14 DOI:10.1109/COMMAD.1998.791661

L. Fu, H. Tan, C. Jagadish, M. Johnston, M. Gal

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引用次数: 4

摘要

采用As和H辐照和随后的热退火方法研究了InGaAs/GaAs和InGaAs/AlGaAs量子阱(QWs)的混合。由于AlGaAs的动态退火和势垒中Al的存在，在As和H辐照后，InGaAs/AlGaAs样品比InGaAs/GaAs样品表现出更好的光致发光强度恢复和更大的能量转移。低剂量As照射获得的能量位移比H照射获得的能量位移大，而高剂量H照射获得的能量位移比As照射获得的能量位移大。照射温度的影响结果表明，低剂量As照射可以随着温度的升高获得更高的能量位移，而H照射对种植体温度的影响不大。

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Quantum well intermixing in InGaAs/(Al)GaAs by As and H irradiation

As and H irradiation with subsequent thermal annealing were used to investigate the intermixing of InGaAs/GaAs and InGaAs/AlGaAs quantum wells (QWs). Large photoluminescence (PL) energy shifts were observed in both materials, Due to dynamic annealing in AlGaAs and the presence of Al in the barriers, the InGaAs/AlGaAs samples showed better PL intensities recovery and larger energy shifts than the InGaAs/GaAs samples after both As and H irradiation. Larger energy shifts were obtained for As irradiation at lower doses than when compared to H irradiation, However, at higher doses H irradiation resulted in higher energy shift than As irradiation, Results of the effect of irradiation temperature showed that higher shift could be obtained with increasing temperature for As irradiation at lower doses while for H irradiation, implant temperature had little effect.

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来源期刊

1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)

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