{"title":"混合Si IGBT-SiC肖特基二极管模块，用于中到高功率应用","authors":"Leif Amber, K. Haddad","doi":"10.1109/APEC.2017.7931127","DOIUrl":null,"url":null,"abstract":"This paper presents a hybrid technology approach serving as an entry point in the industry of SiC devices at high power levels. The proposal consists of paralleling SiC Schottky diodes with high speed IGBTs in a baseplate-less and solder free module to alleviate the high cost of wide band gap devices, improve performance of the converter and also enhance its reliability. An experimental inverter rated 100kW is built and measurements are made to highlight the benefits of the technique when compared to full Si devices packaged in a baseplate-less module.","PeriodicalId":201289,"journal":{"name":"2017 IEEE Applied Power Electronics Conference and Exposition (APEC)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"13","resultStr":"{\"title\":\"Hybrid Si IGBT-SiC Schottky diode modules for medium to high power applications\",\"authors\":\"Leif Amber, K. Haddad\",\"doi\":\"10.1109/APEC.2017.7931127\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a hybrid technology approach serving as an entry point in the industry of SiC devices at high power levels. The proposal consists of paralleling SiC Schottky diodes with high speed IGBTs in a baseplate-less and solder free module to alleviate the high cost of wide band gap devices, improve performance of the converter and also enhance its reliability. An experimental inverter rated 100kW is built and measurements are made to highlight the benefits of the technique when compared to full Si devices packaged in a baseplate-less module.\",\"PeriodicalId\":201289,\"journal\":{\"name\":\"2017 IEEE Applied Power Electronics Conference and Exposition (APEC)\",\"volume\":\"8 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-03-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"13\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 IEEE Applied Power Electronics Conference and Exposition (APEC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/APEC.2017.7931127\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 IEEE Applied Power Electronics Conference and Exposition (APEC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/APEC.2017.7931127","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Hybrid Si IGBT-SiC Schottky diode modules for medium to high power applications
This paper presents a hybrid technology approach serving as an entry point in the industry of SiC devices at high power levels. The proposal consists of paralleling SiC Schottky diodes with high speed IGBTs in a baseplate-less and solder free module to alleviate the high cost of wide band gap devices, improve performance of the converter and also enhance its reliability. An experimental inverter rated 100kW is built and measurements are made to highlight the benefits of the technique when compared to full Si devices packaged in a baseplate-less module.
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